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1 double-implanted mos
MOS design — МОП-структура; МОП-прибор
English-Russian big polytechnic dictionary > double-implanted mos
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2 double-implanted MOS
Большой англо-русский и русско-английский словарь > double-implanted MOS
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3 double-implanted MOS
МОП-структура, формируемая методом двойной ионной имплантацииАнгло-русский словарь технических терминов > double-implanted MOS
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4 double-implanted MOS
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5 double-implanted MOS
Engineering: DIMOSУниверсальный русско-английский словарь > double-implanted MOS
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6 Double-Implanted MOS
сущ.микроэл. МОП-структура, полученная методом двойного ионного легирования, МОП-транзистор, изготовленный с применением метода двойного ионного легированияУниверсальный немецко-русский словарь > Double-Implanted MOS
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7 Double-Implanted MOS
microel. DIMOSУниверсальный русско-немецкий словарь > Double-Implanted MOS
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8 double-implanted MOS
МОН-структура, виготовлена методом подвійної іонної імплантаціїEnglish-Ukrainian dictionary of microelectronics > double-implanted MOS
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9 double-implanted MOS
English-Russian dictionary of microelectronics > double-implanted MOS
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10 double-implanted MOS transistor
English-German dictionary of Electrical Engineering and Electronics > double-implanted MOS transistor
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11 double-implanted MOS transistor
Микроэлектроника: МОП-транзистор, изготовленный методом двойной ионной имплантацииУниверсальный англо-русский словарь > double-implanted MOS transistor
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12 double-implanted MOS transistor
МОН-транзистор, виготовлений методом подвійної іонної імплантаціїEnglish-Ukrainian dictionary of microelectronics > double-implanted MOS transistor
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13 double-implanted MOS transistor
МОП-транзистор, изготовленный методом двойной ионной имплантацииEnglish-Russian dictionary of microelectronics > double-implanted MOS transistor
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14 MOS
I сокр. от mean opinion score II сокр. от metal-oxide-semiconductorструктура (типа) металл - оксид - полупроводник, МОП-структура-
adjustable-threshold MOS
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aluminum-gate MOS
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back-gate MOS
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beam-addressed MOS
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bipolar MOS
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bulk complementary MOS
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buried channel MOS
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buried-oxide MOS
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clocked complementary MOS
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complementary MOS
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depletion MOS
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dielectric insulated MOS
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dielectric isolated MOS
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diffusion self-aligned MOS
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double polysilicon MOS
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double poly MOS
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double-diffused MOS
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double-implanted MOS
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dynamic complementary MOS
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enhancement MOS
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enhancement/depletion MOS
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floating-gate avalanche injection MOS
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floating-gate MOS
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high-density MOS
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high-performance complementery MOS
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high-threshold MOS
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high-voltage MOS
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insulated gate MOS
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ion-implanted MOS
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isolated gate MOS
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junction gate MOS
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lateral planar MOS
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local oxidation MOS
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long MOS
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low-threshold MOS
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metal-gate MOS
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micrometer MOS
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micron MOS
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n-channel MOS
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p-channel MOS
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polysilicon self-aligned MOS
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poly self-aligned MOS
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power MOS
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quadruple self-aligned MOS
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refractory MOS
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resistive-gate MOS
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scaled-down MOS
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scaled MOS
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Schottky-barrier MOS
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self-aligned MOS
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silicon-gate technology MOS
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silicon-gate MOS
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silicon-on-sapphire complementary MOS
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stacked transistors complementary MOS
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submicrometer MOS
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submicron MOS
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surface gate MOS
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three-dimensional MOS
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transverse MOS
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triple-polysilicon MOS
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triple-poly MOS
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V-groove MOS
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V MOS -
15 MOS
структура метал–оксид–напівпровідник, МОН-структура - aluminum-gate MOS
- avalanche-injection stacked gate MOS
- avalanche stacked gate MOS
- back-gate MOS
- bulk complementary MOS
- buried-channel MOS
- buried-oxide MOS
- clocked complementary MOS
- complementary symmetry MOS
- complementary MOS
- composite-gate MOS
- depletion MOS
- dielectric-insulated MOS
- dielectric-isolated MOS
- double-diffused MOS
- double-implanted MOS
- double-level polysilicon MOS
- elevated-electrode MOS
- enhancement MOS
- floating-gate MOS
- grooved-gate MOS
- high-threshold MOS
- high-voltage MOS
- ion-implanted MOS
- lateral-merged bipolar MOS
- low-threshold MOS
- merged MOS
- multigate MOS
- n-channelMOS
- nMOS
- p-channelMOS
- pMOS
- polycrystalline silicon-gate MOS
- quadruply self-aligned MOS
- refractory MOS
- resistive-gate MOS
- scaled MOS
- Schottky-barrier MOS
- self-aligned MOS
- silicon-gate MOS
- single-channel MOS
- single-poly gate MOS
- substrate-fed MOS
- vertical MOS
- V-groove MOS
- V-notch MOS -
16 doppeltimplantierter MOS-Transistor
MOS-Transistor m: doppeltimplantierter MOS-Transistor m double-implanted MOS-transistor, DIMOS transistorDeutsch-Englisch Wörterbuch der Elektrotechnik und Elektronik > doppeltimplantierter MOS-Transistor
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17 doppeltimplantierter MOS
Deutsch-Englisch Wörterbuch der Elektrotechnik und Elektronik > doppeltimplantierter MOS
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18 DIMOS
double-implanted MOS - МОП-структура, изготовленная методом двойной ионной имплантации -
19 transistor
транзистор - abrupt heterojunction bipolar transistor
- access transistor
- amorphous transistor
- avalanche-injector MOS transistor
- ballistic transistor
- barrier-emitter transistor
- beam-lead transistor
- bipolar junction transistor
- bipolar transistor
- bipolar quantum resonant tunneling transistor
- buried-channel MOS transistor
- buried-channel transistor
- buried-oxide MOS transistor
- charge-injection transistor
- chip transistor
- chip-and-wire transistor
- clamped transistor
- closed-gate MOS transistor
- collector-grounded transistor
- common-base transistor
- common-collector transistor
- common-emitter transistor
- complementary transistors
- composite transistor
- Darlington transistor
- deep depletion transistor
- deep-diode transistor
- depletion-mode MOS transistor
- depletion MOS transistor
- diffused-emitter-and-base transistor
- diffused planar transistor
- δ-doped field-effect transistor
- double-diffused MOS transistor
- double-heterojunction bipolar transistor
- double-implanted MOS transistor
- downward-scaled MOS transistor
- electrostatic induction transistor
- emitter-coupled transistor
- enhancement-mode MOS transistor
- enhancement MOS transistor
- epibase transistor
- epitaxial planar transistor
- epitaxial transistor
- fan-out transistor
- fast switching transistor
- field-effect transistor
- filamentary transistor
- floating-gate MOS transistor
- front-end transistor
- gate-modulated bipolar transistor
- GIMIC transistor
- grooved-gate MOS transistor
- heterojunction transistor
- high-electron mobility transistor
- high-performance transistor
- H-MOS transistor
- homojunction transistor
- hot-electron transistor
- integrated circuit transistor
- integrated transistor
- interdigitated transistor
- inverted transistor
- ion-implanted base transistor
- ion sensitive field effect transistor ISFET
- ion sensitive field effect transistor
- junction transistor
- lateral transistor
- load transistor
- low-power transistor
- memory transistor
- merged transistor
- mesa-typetransistor
- mesatransistor
- mesh-emitter transistor
- metal-alumina-semiconductor transistor
- metal-base transistor
- metal-gate MOS transistor
- metal-insulator-semiconductor transistor
- metal-nitride-oxide-semiconductor transistor
- metal-oxide-semiconductor transistor
- micropower transistor
- monoiythic hot-electron transistor
- multiemitter transistor
- multiple-emitter transistor
- multiple integrated transistor
- n-channel MOS transistor
- negative-impedance transistor
- n-p-n transistor
- off transistor
- on transistor
- optical transistor
- optoelectronic transistor
- overlay transistor
- parasitic transistor
- pass-gate transistor
- p-channel MOS transistor
- p-channel transistor
- permeable-base transistor
- piezo transistor
- planar transistor
- planar epitaxial transistor
- plastic transistor
- p-n-p transistor
- pull-up transistor
- punch-through transistor
- quantum-effect transistor
- quantum wire transistor
- radio-frequency transistor
- recessed-gate MOS transistor
- recessed-gate transistor
- resonant-gate transistor
- Schottky transistor
- Schottky-barrier collector transistor
- Schottky collector transistor
- Schottky-diode clamped transistor
- Schottky gated transistor
- sealed transistor
- series-connectedtransistors
- seriestransistors
- shallow-junction transistor
- silicon-gate MOS transistor
- silicon-gate transistor
- silicon-on-sapphire transistor
- stacked transistor
- static induction transistor
- stepped electrode transistor
- superconducting transistor
- surface-barrier transistor
- surface-charge transistor
- switching-type transistor
- switching transistor
- tandem transistor
- thin-film transistor
- T-MOS transistor
- trap-controlled transistor
- tunnel emitter transistor
- unijunction transistor
- unipolar transistor
- vertical transistor
- XMOS transistor
- 3D trench transistorEnglish-Ukrainian dictionary of microelectronics > transistor
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20 МОП-транзистор, изготовленный методом двойной ионной имплантации
1) Electronics: (полевой) double-implanted metal-oxide-semiconductor field-effect transistor (DIMOSFET), (полевой) DIMOSFET (сокр. от double-implanted metal-oxide-semiconductor field-effect transistor)2) Microelectronics: double-implanted MOS transistorУниверсальный русско-английский словарь > МОП-транзистор, изготовленный методом двойной ионной имплантации
См. также в других словарях:
double-implanted MOS — dukart jonais implantuotas MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double implanted MOS; double implanted MOS structure vok. doppelimplantierte MOS Struktur, f rus. МОП структура с двойной ионной имплантацией, f pranc.… … Radioelektronikos terminų žodynas
double-implanted MOS structure — dukart jonais implantuotas MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double implanted MOS; double implanted MOS structure vok. doppelimplantierte MOS Struktur, f rus. МОП структура с двойной ионной имплантацией, f pranc.… … Radioelektronikos terminų žodynas
structure MOS à double implantation ionique — dukart jonais implantuotas MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double implanted MOS; double implanted MOS structure vok. doppelimplantierte MOS Struktur, f rus. МОП структура с двойной ионной имплантацией, f pranc.… … Radioelektronikos terminų žodynas
doppelimplantierte MOS-Struktur — dukart jonais implantuotas MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double implanted MOS; double implanted MOS structure vok. doppelimplantierte MOS Struktur, f rus. МОП структура с двойной ионной имплантацией, f pranc.… … Radioelektronikos terminų žodynas
dukart jonais implantuotas MOP darinys — statusas T sritis radioelektronika atitikmenys: angl. double implanted MOS; double implanted MOS structure vok. doppelimplantierte MOS Struktur, f rus. МОП структура с двойной ионной имплантацией, f pranc. structure MOS à double implantation… … Radioelektronikos terminų žodynas
МОП-структура с двойной ионной имплантацией — dukart jonais implantuotas MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double implanted MOS; double implanted MOS structure vok. doppelimplantierte MOS Struktur, f rus. МОП структура с двойной ионной имплантацией, f pranc.… … Radioelektronikos terminų žodynas
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